SI2301CDS-T1-BE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Vishay Siliconix

Part Status

Active

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10 nC @ 4.5 V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

405 pF @ 10 V

FET Type

P-Channel

Power Dissipation (Max)

860mW (Ta), 1.6W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

20 V

Current - Continuous Drain (Id) @ 25°C

2.3A (Ta), 3.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

112mOhm @ 2.8A, 4.5V

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

Packaging

Tape & Reel (TR); Cut Tape (CT)