Component information

SI2302CDS-T1-E3

Vishay Siliconix SI2302CDS-T1-E3: Single FETs, MOSFETs. Package / Case: TO-236-3, SC-59, SOT-23-3. Supplier Device Package: SOT-23-3 (TO-236).

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Mfr
Vishay Siliconix
Series
TrenchFET®
Part Status
Active
Rds On (Max) @ Id, Vgs
57mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id
850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.5 nC @ 4.5 V
Vgs (Max)
±8V
Power Dissipation (Max)
710mW (Ta)
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3
Packaging
Tape & Reel (TR); Cut Tape (CT)
Base Product Number
SI2302

Documentation and references

Reference document ↗

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