Component information
SI2306BDS-T1-E3
SI2306BDS-T1-E3 component information and product attributes.
Product information
- Manufacturer
- Vishay Siliconix
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Mfr
- Vishay Siliconix
- Gate Charge (Qg) (Max) @ Vgs
- 4.5 nC @ 5 V
- Series
- TrenchFET®
- Vgs (Max)
- ±20V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 305 pF @ 15 V
- Part Status
- Active
- Power Dissipation (Max)
- 750mW (Ta)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 30 V
- Supplier Device Package
- SOT-23-3 (TO-236)
- Current - Continuous Drain (Id) @ 25°C
- 3.16A (Ta)
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Base Product Number
- SI2306
- Rds On (Max) @ Id, Vgs
- 47mOhm @ 3.5A, 10V
Documentation and references
Documentation can be discussed with your inquiry.
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