SI2309CDS-T1-BE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Vishay Siliconix

Part Status

Active

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4.1 nC @ 4.5 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

210 pF @ 30 V

FET Type

P-Channel

Power Dissipation (Max)

1W (Ta), 1.7W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

60 V

Current - Continuous Drain (Id) @ 25°C

1.2A (Ta), 1.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

345mOhm @ 1.25A, 10V

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

Packaging

Tape & Reel (TR); Cut Tape (CT)