SI3552BDV-T1-GE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Part Status

Active

Rds On (Max) @ Id, Vgs

58mOhm @ 3.4A, 10V, 165mOhm @ 1.9A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA, 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3nC @ 4.5V, 3.6nC @ 4.5V

Power - Max

1.1W (Ta)

Operating Temperature

-55°C ~ 150°C

Technology

MOSFET (Metal Oxide)

Configuration

N and P-Channel

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.4A (Ta), 1.9A (Ta)

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

6-TSOP

Packaging

Tape & Reel (TR); Cut Tape (CT)