Component information

SI3932DV-T1-GE3

SI3932DV-T1-GE3 component information and product attributes.

Product information

Manufacturer
Vishay Siliconix
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Rds On (Max) @ Id, Vgs
58mOhm @ 3.4A, 10V
Manufacturer
Vishay Siliconix
Vgs(th) (Max) @ Id
2.2V @ 250µA
Series
TrenchFET®
Gate Charge (Qg) (Max) @ Vgs
6nC @ 10V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
235pF @ 15V
Part Status
Active
Power - Max
1.4W
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Configuration
2 N-Channel (Dual)
Mounting Type
Surface Mount
FET Feature
Logic Level Gate
Package / Case
SOT-23-6 Thin, TSOT-23-6
Drain to Source Voltage (Vdss)
30V
Supplier Device Package
6-TSOP
Current - Continuous Drain (Id) @ 25°C
3.7A
Base Product Number
SI3932

Documentation and references

Reference document ↗

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