Component information

SI4062DY-T1-GE3

Vishay Siliconix SI4062DY-T1-GE3: Single FETs, MOSFETs. Package / Case: 8-SOIC (0.154", 3.90mm Width). Supplier Device Package: 8-SOIC.

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Mfr
Vishay Siliconix
Series
TrenchFET®
Part Status
Active
Rds On (Max) @ Id, Vgs
4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3175 pF @ 30 V
FET Type
N-Channel
Power Dissipation (Max)
7.8W (Tc)
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
32.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Packaging
Tape & Reel (TR); Cut Tape (CT)
Base Product Number
SI4062

Documentation and references

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