Component information

SI4403CDY-T1-GE3

Vishay Siliconix SI4403CDY-T1-GE3: Single FETs, MOSFETs. Package / Case: 8-SOIC (0.154", 3.90mm Width). Supplier Device Package: 8-SOIC.

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Mfr
Vishay Siliconix
Series
TrenchFET®
Part Status
Active
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 8 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
2380 pF @ 10 V
Power Dissipation (Max)
5W (Tc)
FET Type
P-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
13.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
15.5mOhm @ 9A, 4.5V
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Packaging
Tape & Reel (TR); Cut Tape (CT)
Base Product Number
SI4403

Documentation and references

Reference document ↗

Request a quotation

Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.

Prepare an RFQ

Before requesting a quotation

Check the complete part number
Chat on WhatsApp