Component information
SI4501BDY-T1-GE3
SI4501BDY-T1-GE3 component information and product attributes.
Product information
- Manufacturer
- Vishay Siliconix
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Rds On (Max) @ Id, Vgs
- 17mOhm @ 10A, 10V
- Manufacturer
- Vishay Siliconix
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Series
- TrenchFET®
- Gate Charge (Qg) (Max) @ Vgs
- 25nC @ 10V
- Packaging
- Tape & Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds
- 805pF @ 15V
- Part Status
- Obsolete
- Power - Max
- 4.5W, 3.1W
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Configuration
- N and P-Channel, Common Drain
- Mounting Type
- Surface Mount
- FET Feature
- Logic Level Gate
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Drain to Source Voltage (Vdss)
- 30V, 8V
- Supplier Device Package
- 8-SOIC
- Current - Continuous Drain (Id) @ 25°C
- 12A, 8A
- Base Product Number
- SI4501
Documentation and references
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