Component information
SI4532CDY-T1-GE3
SI4532CDY-T1-GE3 component information and product attributes.
Product information
- Manufacturer
- Vishay Siliconix
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Manufacturer
- Vishay Siliconix
- Gate Charge (Qg) (Max) @ Vgs
- 9nC @ 10V
- Series
- TrenchFET®
- Input Capacitance (Ciss) (Max) @ Vds
- 305pF @ 15V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Power - Max
- 2.78W
- Part Status
- Active
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Configuration
- N and P-Channel
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Drain to Source Voltage (Vdss)
- 30V
- Supplier Device Package
- 8-SOIC
- Current - Continuous Drain (Id) @ 25°C
- 6A, 4.3A
- Base Product Number
- SI4532
- Rds On (Max) @ Id, Vgs
- 47mOhm @ 3.5A, 10V
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ