Component information

SI4559ADY-T1-E3

SI4559ADY-T1-E3 component information and product attributes.

Product information

Manufacturer
Vishay Siliconix
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Rds On (Max) @ Id, Vgs
58mOhm @ 4.3A, 10V
Manufacturer
Vishay Siliconix
Vgs(th) (Max) @ Id
3V @ 250µA
Series
TrenchFET®
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V, 22nC @ 10V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
665pF @ 15V, 650pF @ 15V
Part Status
Obsolete
Power - Max
3.1W, 3.4W
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Configuration
N and P-Channel
Mounting Type
Surface Mount
FET Feature
Logic Level Gate
Package / Case
8-SOIC (0.154", 3.90mm Width)
Drain to Source Voltage (Vdss)
60V
Supplier Device Package
8-SOIC
Current - Continuous Drain (Id) @ 25°C
5.3A, 3.9A
Base Product Number
SI4559

Documentation and references

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