SI4896DY-T1-GE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Vishay Siliconix

Series

TrenchFET®

Part Status

Active

Rds On (Max) @ Id, Vgs

16.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

41 nC @ 10 V

Vgs (Max)

±20V

Power Dissipation (Max)

1.56W (Ta)

FET Type

N-Channel

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80 V

Current - Continuous Drain (Id) @ 25°C

6.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

SI4896