Component information
SI4948BEY-T1-E3
SI4948BEY-T1-E3 component information and product attributes.
Product information
- Manufacturer
- Vishay Siliconix
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Rds On (Max) @ Id, Vgs
- 120mOhm @ 3.1A, 10V
- Manufacturer
- Vishay Siliconix
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Series
- TrenchFET®
- Gate Charge (Qg) (Max) @ Vgs
- 22nC @ 10V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Power - Max
- 1.4W
- Part Status
- Active
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Configuration
- 2 P-Channel (Dual)
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- FET Feature
- Logic Level Gate
- Supplier Device Package
- 8-SOIC
- Drain to Source Voltage (Vdss)
- 60V
- Base Product Number
- SI4948
- Current - Continuous Drain (Id) @ 25°C
- 2.4A
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ