SI5459DU-T1-GE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Vishay Siliconix

Series

TrenchFET®

Part Status

Active

Vgs(th) (Max) @ Id

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26 nC @ 10 V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

665 pF @ 10 V

Power Dissipation (Max)

3.5W (Ta), 10.9W (Tc)

FET Type

P-Channel

Operating Temperature

-50°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20 V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

52mOhm @ 6.7A, 4.5V

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® ChipFET™ Single

Package / Case

PowerPAK® ChipFET™ Single

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

SI5459