SI5515CDC-T1-E3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Part Status

Active

Rds On (Max) @ Id, Vgs

36mOhm @ 6A, 4.5V

Vgs(th) (Max) @ Id

800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11.3nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

632pF @ 10V

Power - Max

3.1W

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Configuration

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Leads

Supplier Device Package

1206-8 ChipFET™

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

SI5515