SI5935CDC-T1-E3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Part Status

Active

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

455pF @ 10V

Power - Max

3.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Configuration

2 P-Channel (Dual)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4A

Rds On (Max) @ Id, Vgs

100mOhm @ 3.1A, 4.5V

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Leads

Supplier Device Package

1206-8 ChipFET™

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

SI5935