Component information
SI5935CDC-T1-GE3
SI5935CDC-T1-GE3 component information and product attributes.
Product information
- Manufacturer
- Vishay Siliconix
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Manufacturer
- Vishay Siliconix
- Gate Charge (Qg) (Max) @ Vgs
- 11nC @ 5V
- Series
- TrenchFET®
- Input Capacitance (Ciss) (Max) @ Vds
- 455pF @ 10V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Power - Max
- 3.1W
- Part Status
- Active
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Configuration
- 2 P-Channel (Dual)
- Package / Case
- 8-SMD, Flat Leads
- Drain to Source Voltage (Vdss)
- 20V
- Supplier Device Package
- 1206-8 ChipFET™
- Current - Continuous Drain (Id) @ 25°C
- 4A
- Base Product Number
- SI5935
- Rds On (Max) @ Id, Vgs
- 100mOhm @ 3.1A, 4.5V
Documentation and references
Documentation can be discussed with your inquiry.
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ