Component information
SI6423DQ-T1-E3
SI6423DQ-T1-E3 component information and product attributes.
Product information
- Manufacturer
- Vishay Siliconix
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Rds On (Max) @ Id, Vgs
- 8.5mOhm @ 9.5A, 4.5V
- Mfr
- Vishay Siliconix
- Vgs(th) (Max) @ Id
- 800mV @ 400µA
- Series
- TrenchFET®
- Gate Charge (Qg) (Max) @ Vgs
- 110 nC @ 5 V
- Packaging
- Tape & Reel (TR)
- Vgs (Max)
- ±8V
- Part Status
- Last Time Buy
- Power Dissipation (Max)
- 1.05W (Ta)
- FET Type
- P-Channel
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 12 V
- Supplier Device Package
- 8-TSSOP
- Current - Continuous Drain (Id) @ 25°C
- 8.2A (Ta)
- Package / Case
- 8-TSSOP (0.173", 4.40mm Width)
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Base Product Number
- SI6423
Documentation and references
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