Component information
SI6913DQ-T1-GE3
SI6913DQ-T1-GE3 component information and product attributes.
Product information
- Manufacturer
- Vishay Siliconix
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Rds On (Max) @ Id, Vgs
- 21mOhm @ 5.8A, 4.5V
- Manufacturer
- Vishay Siliconix
- Vgs(th) (Max) @ Id
- 900mV @ 400µA
- Series
- TrenchFET®
- Gate Charge (Qg) (Max) @ Vgs
- 28nC @ 4.5V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Power - Max
- 830mW
- Part Status
- Last Time Buy
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Configuration
- 2 P-Channel (Dual)
- Package / Case
- 8-TSSOP (0.173", 4.40mm Width)
- FET Feature
- Logic Level Gate
- Supplier Device Package
- 8-TSSOP
- Drain to Source Voltage (Vdss)
- 12V
- Base Product Number
- SI6913
- Current - Continuous Drain (Id) @ 25°C
- 4.9A
Documentation and references
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