Component information

SI7121ADN-T1-GE3

SI7121ADN-T1-GE3 component information and product attributes.

Product information

Manufacturer
Vishay Siliconix
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
2.5V @ 250µA
Mfr
Vishay Siliconix
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Series
TrenchFET®
Vgs (Max)
±25V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
1870 pF @ 15 V
Part Status
Active
Power Dissipation (Max)
3.5W (Ta), 27.8W (Tc)
FET Type
P-Channel
Operating Temperature
-50°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
30 V
Supplier Device Package
PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C
12A (Ta)
Package / Case
PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Base Product Number
SI7121
Rds On (Max) @ Id, Vgs
15mOhm @ 7A, 10V

Documentation and references

Reference document ↗

Request a quotation

Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.

Prepare an RFQ

Before requesting a quotation

Check the complete part number