Component information
SI7129DN-T1-GE3
SI7129DN-T1-GE3 component information and product attributes.
Product information
- Manufacturer
- Vishay Siliconix
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 2.8V @ 250µA
- Mfr
- Vishay Siliconix
- Gate Charge (Qg) (Max) @ Vgs
- 71 nC @ 10 V
- Series
- TrenchFET®
- Vgs (Max)
- ±20V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 3345 pF @ 15 V
- Part Status
- Active
- Power Dissipation (Max)
- 3.8W (Ta), 52.1W (Tc)
- FET Type
- P-Channel
- Operating Temperature
- -50°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 30 V
- Supplier Device Package
- PowerPAK® 1212-8
- Current - Continuous Drain (Id) @ 25°C
- 35A (Tc)
- Package / Case
- PowerPAK® 1212-8
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Base Product Number
- SI7129
- Rds On (Max) @ Id, Vgs
- 11.4mOhm @ 14.4A, 10V
Documentation and references
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