Component information

SI7450DP-T1-E3

SI7450DP-T1-E3 component information and product attributes.

Product information

Manufacturer
Vishay Siliconix
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Rds On (Max) @ Id, Vgs
80mOhm @ 4A, 10V
Mfr
Vishay Siliconix
Vgs(th) (Max) @ Id
4.5V @ 250µA
Series
TrenchFET®
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
±20V
Part Status
Active
Power Dissipation (Max)
1.9W (Ta)
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
200 V
Supplier Device Package
PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C
3.2A (Ta)
Package / Case
PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Base Product Number
SI7450

Documentation and references

Reference document ↗

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