Component information
SI7619DN-T1-GE3
Vishay Siliconix SI7619DN-T1-GE3: Single FETs, MOSFETs. Package / Case: PowerPAK® 1212-8. Supplier Device Package: PowerPAK® 1212-8.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Vishay Siliconix
- Series
- TrenchFET®
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 50 nC @ 10 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 1350 pF @ 15 V
- Power Dissipation (Max)
- 3.5W (Ta), 27.8W (Tc)
- FET Type
- P-Channel
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 30 V
- Current - Continuous Drain (Id) @ 25°C
- 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs
- 21mOhm @ 10.5A, 10V
- Mounting Type
- Surface Mount
- Supplier Device Package
- PowerPAK® 1212-8
- Package / Case
- PowerPAK® 1212-8
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- SI7619
Documentation and references
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