Component information
SI7913BDN-T1-GE3
Vishay Siliconix SI7913BDN-T1-GE3: FET, MOSFET Arrays. Package / Case: PowerPAK® 1212-8 Dual. Supplier Device Package: PowerPAK® 1212-8 Dual.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Vishay Siliconix
- Series
- TrenchFET®
- Part Status
- Active
- Rds On (Max) @ Id, Vgs
- 25.5mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 52.2nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds
- 1825pF @ 10V
- Power - Max
- 2.5W (Ta), 19.8W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C
- Configuration
- 2 P-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 6A (Ta), 6A (Tc)
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® 1212-8 Dual
- Supplier Device Package
- PowerPAK® 1212-8 Dual
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ