Component information
SI7949DP-T1-GE3
Vishay Siliconix SI7949DP-T1-GE3: FET, MOSFET Arrays. Package / Case: PowerPAK® SO-8 Dual. Supplier Device Package: PowerPAK® SO-8 Dual.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Vishay Siliconix
- Series
- TrenchFET®
- Part Status
- Active
- Rds On (Max) @ Id, Vgs
- 64mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 40nC @ 10V
- Power - Max
- 1.5W
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Configuration
- 2 P-Channel (Dual)
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 60V
- Current - Continuous Drain (Id) @ 25°C
- 3.2A
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® SO-8 Dual
- Supplier Device Package
- PowerPAK® SO-8 Dual
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- SI7949
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ