Component information
SI7997DP-T1-GE3
SI7997DP-T1-GE3 component information and product attributes.
Product information
- Manufacturer
- Vishay Siliconix
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Vgs(th) (Max) @ Id
- 2.2V @ 250µA
- Manufacturer
- Vishay Siliconix
- Gate Charge (Qg) (Max) @ Vgs
- 160nC @ 10V
- Series
- TrenchFET®
- Input Capacitance (Ciss) (Max) @ Vds
- 6200pF @ 15V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Power - Max
- 46W
- Part Status
- Active
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Configuration
- 2 P-Channel (Dual)
- Package / Case
- PowerPAK® SO-8 Dual
- Drain to Source Voltage (Vdss)
- 30V
- Supplier Device Package
- PowerPAK® SO-8 Dual
- Current - Continuous Drain (Id) @ 25°C
- 60A
- Base Product Number
- SI7997
- Rds On (Max) @ Id, Vgs
- 5.5mOhm @ 20A, 10V
Documentation and references
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