SI8466EDB-T2-E1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Vishay Siliconix

Series

TrenchFET®

Part Status

Active

Vgs(th) (Max) @ Id

700mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13 nC @ 4.5 V

Vgs (Max)

±5V

Input Capacitance (Ciss) (Max) @ Vds

710 pF @ 4 V

Power Dissipation (Max)

780mW (Ta), 1.8W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

8 V

Current - Continuous Drain (Id) @ 25°C

3.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

43mOhm @ 2A, 4.5V

Mounting Type

Surface Mount

Supplier Device Package

4-Microfoot

Package / Case

4-UFBGA, WLCSP

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

SI8466