Component information
SI8483DB-T2-E1
SI8483DB-T2-E1 component information and product attributes.
Product information
- Manufacturer
- Vishay Siliconix
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 800mV @ 250µA
- Mfr
- Vishay Siliconix
- Gate Charge (Qg) (Max) @ Vgs
- 65 nC @ 10 V
- Series
- TrenchFET®
- Vgs (Max)
- ±10V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 1840 pF @ 6 V
- Part Status
- Active
- Power Dissipation (Max)
- 2.77W (Ta), 13W (Tc)
- FET Type
- P-Channel
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 12 V
- Supplier Device Package
- 6-Micro Foot™ (1.5x1)
- Current - Continuous Drain (Id) @ 25°C
- 16A (Tc)
- Package / Case
- 6-UFBGA
- Drive Voltage (Max Rds On, Min Rds On)
- 1.5V, 4.5V
- Base Product Number
- SI8483
- Rds On (Max) @ Id, Vgs
- 26mOhm @ 1.5A, 4.5V
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ