SI8819EDB-T2-E1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Vishay Siliconix

Part Status

Active

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17 nC @ 8 V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

650 pF @ 6 V

FET Type

P-Channel

Power Dissipation (Max)

900mW (Ta)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

12 V

Current - Continuous Drain (Id) @ 25°C

2.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 3.7V

Rds On (Max) @ Id, Vgs

80mOhm @ 1.5A, 3.7V

Mounting Type

Surface Mount

Supplier Device Package

4-MICRO FOOT® (0.80x0.80)

Package / Case

4-XFBGA

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

SI8819