SI8916EDB-T6-E1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Part Status

Active

Rds On (Max) @ Id, Vgs

75mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

220pF @ 10V

Power - Max

770mW (Ta)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Configuration

2 N-Channel (Half Bridge)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.5A (Ta)

Mounting Type

Surface Mount

Package / Case

4-SMD, No Lead

Supplier Device Package

MicroFOOT® 2x2NB

Packaging

Tape & Reel (TR); Cut Tape (CT)