Component information
SIA4265EDJ-T1-GE3
Vishay Siliconix SIA4265EDJ-T1-GE3: Single FETs, MOSFETs. Package / Case: PowerPAK® SC-70-6. Supplier Device Package: PowerPAK® SC-70-6.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Vishay Siliconix
- Series
- TrenchFET®
- Part Status
- Active
- Rds On (Max) @ Id, Vgs
- 32mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 36 nC @ 8 V
- Vgs (Max)
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds
- 1180 pF @ 0 V
- FET Type
- P-Channel
- Power Dissipation (Max)
- 2.9W (Ta), 15.6W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 20 V
- Current - Continuous Drain (Id) @ 25°C
- 7.8A (Ta), 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Mounting Type
- Surface Mount
- Supplier Device Package
- PowerPAK® SC-70-6
- Package / Case
- PowerPAK® SC-70-6
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
Documentation and references
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