Component information
SIA433EDJ-T1-GE3
SIA433EDJ-T1-GE3 component information and product attributes.
Product information
- Manufacturer
- Vishay Siliconix
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Rds On (Max) @ Id, Vgs
- 18mOhm @ 7.6A, 4.5V
- Mfr
- Vishay Siliconix
- Vgs(th) (Max) @ Id
- 1.2V @ 250µA
- Series
- TrenchFET®
- Gate Charge (Qg) (Max) @ Vgs
- 75 nC @ 8 V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Vgs (Max)
- ±12V
- Part Status
- Active
- Power Dissipation (Max)
- 3.5W (Ta), 19W (Tc)
- FET Type
- P-Channel
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 20 V
- Supplier Device Package
- PowerPAK® SC-70-6
- Current - Continuous Drain (Id) @ 25°C
- 12A (Tc)
- Package / Case
- PowerPAK® SC-70-6
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Base Product Number
- SIA433
Documentation and references
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