Component information

SIA440DJ-T1-GE3

SIA440DJ-T1-GE3 component information and product attributes.

Product information

Manufacturer
Vishay Siliconix
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
1.4V @ 250µA
Mfr
Vishay Siliconix
Gate Charge (Qg) (Max) @ Vgs
21.5 nC @ 10 V
Series
TrenchFET®
Vgs (Max)
±12V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 20 V
Part Status
Active
Power Dissipation (Max)
3.5W (Ta), 19W (Tc)
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
40 V
Supplier Device Package
PowerPAK® SC-70-6
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Package / Case
PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Base Product Number
SIA440
Rds On (Max) @ Id, Vgs
26mOhm @ 9A, 10V

Documentation and references

Reference document ↗

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