Component information
SIA466EDJ-T1-GE3
Vishay Siliconix SIA466EDJ-T1-GE3: Single FETs, MOSFETs. Package / Case: PowerPAK® SC-70-6. Supplier Device Package: PowerPAK® SC-70-6.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Vishay Siliconix
- Series
- TrenchFET®
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 20 nC @ 10 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 620 pF @ 1 V
- Power Dissipation (Max)
- 3.5W (Ta), 19.2W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 20 V
- Current - Continuous Drain (Id) @ 25°C
- 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs
- 9.5mOhm @ 9A, 10V
- Mounting Type
- Surface Mount
- Supplier Device Package
- PowerPAK® SC-70-6
- Package / Case
- PowerPAK® SC-70-6
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- SIA466
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ