SIA485DJ-T1-GE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Vishay Siliconix

Part Status

Active

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.3 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

155 pF @ 75 V

FET Type

P-Channel

Power Dissipation (Max)

15.6W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

150 V

Current - Continuous Drain (Id) @ 25°C

1.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

2.6Ohm @ 500mA, 10V

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SC-70-6

Package / Case

PowerPAK® SC-70-6

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

SIA485