SIA817EDJ-T1-GE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Vishay Siliconix

Series

LITTLE FOOT®

Part Status

Active

Vgs(th) (Max) @ Id

1.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23 nC @ 10 V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

600 pF @ 15 V

FET Feature

Schottky Diode (Isolated)

FET Type

P-Channel

Power Dissipation (Max)

1.9W (Ta), 6.5W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

65mOhm @ 3A, 10V

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SC-70-6 Dual

Package / Case

PowerPAK® SC-70-6 Dual

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

SIA817