SIA938DJT-T1-GE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

Part Status

Active

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

425pF @ 10V

Power - Max

1.9W (Ta), 7.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Configuration

2 N-Channel (Dual)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.5A (Ta), 4.5A (Tc)

Rds On (Max) @ Id, Vgs

21.5mOhm @ 5A, 10V

Mounting Type

Surface Mount

Package / Case

PowerPAK® SC-70-6 Dual

Supplier Device Package

PowerPAK® SC-70-6 Dual

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

SIA938