Component information
SIA975DJ-T1-GE3
Vishay Siliconix SIA975DJ-T1-GE3: FET, MOSFET Arrays. Package / Case: PowerPAK® SC-70-6 Dual. Supplier Device Package: PowerPAK® SC-70-6 Dual.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Vishay Siliconix
- Series
- TrenchFET®
- Part Status
- Active
- Rds On (Max) @ Id, Vgs
- 41mOhm @ 4.3A, 4.5V
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 26nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds
- 1500pF @ 6V
- Power - Max
- 7.8W
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Configuration
- 2 P-Channel (Dual)
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 12V
- Current - Continuous Drain (Id) @ 25°C
- 4.5A
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® SC-70-6 Dual
- Supplier Device Package
- PowerPAK® SC-70-6 Dual
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- SIA975
Documentation and references
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