SIB4316EDK-T1-GE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Vishay Siliconix

Series

TrenchFET®

Part Status

Active

Rds On (Max) @ Id, Vgs

57mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12 nC @ 10 V

Vgs (Max)

±12V

Power Dissipation (Max)

1.9W (Ta), 10W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

4.5A (Ta), 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SC-75-6

Package / Case

PowerPAK® SC-75-6

Packaging

Tape & Reel (TR); Cut Tape (CT)