Component information

SIB456DK-T1-GE3

Vishay Siliconix SIB456DK-T1-GE3: Single FETs, MOSFETs. Package / Case: PowerPAK® SC-75-6. Supplier Device Package: PowerPAK® SC-75-6.

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Mfr
Vishay Siliconix
Series
TrenchFET®
Part Status
Active
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
130 pF @ 50 V
Power Dissipation (Max)
2.4W (Ta), 13W (Tc)
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
6.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
185mOhm @ 1.9A, 10V
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SC-75-6
Package / Case
PowerPAK® SC-75-6
Packaging
Tape & Reel (TR); Cut Tape (CT)
Base Product Number
SIB456

Documentation and references

Reference document ↗

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