SIHB15N60E-GE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Vishay Siliconix

Part Status

Active

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

78 nC @ 10 V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1350 pF @ 100 V

FET Type

N-Channel

Power Dissipation (Max)

180W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

600 V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

280mOhm @ 8A, 10V

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D2PAK)

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging

Bulk

Base Product Number

SIHB15