Component information

SIHFL110TR-GE3

Vishay Siliconix SIHFL110TR-GE3: Single FETs, MOSFETs. Package / Case: TO-261-4, TO-261AA. Supplier Device Package: SOT-223.

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Mfr
Vishay Siliconix
Part Status
Active
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.3 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 25 V
FET Type
N-Channel
Power Dissipation (Max)
2W (Ta), 3.1W (Tc)
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
540mOhm @ 900mA, 10V
Mounting Type
Surface Mount
Supplier Device Package
SOT-223
Package / Case
TO-261-4, TO-261AA
Packaging
Tape & Reel (TR); Cut Tape (CT)
Base Product Number
SIHFL110

Documentation and references

Reference document ↗

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