SIJH112E-T1-GE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Vishay Siliconix

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

160 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8050 pF @ 50 V

Power Dissipation (Max)

3.3W (Ta), 333W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

23A (Ta), 225A (Tc)

Rds On (Max) @ Id, Vgs

2.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 8 x 8

Package / Case

8-PowerTDFN

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

SIJH112