Component information
SIJH600E-T1-GE3
Vishay Siliconix SIJH600E-T1-GE3: Single FETs, MOSFETs. Package / Case: PowerPAK® 8 x 8. Supplier Device Package: PowerPAK® 8 x 8.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Vishay Siliconix
- Series
- TrenchFET® Gen IV
- Part Status
- Active
- Rds On (Max) @ Id, Vgs
- 0.92mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 212 nC @ 10 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 9950 pF @ 30 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 3.3W (Ta), 333W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss)
- 60 V
- Current - Continuous Drain (Id) @ 25°C
- 37A (Ta), 373A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 7.5V, 10V
- Mounting Type
- Surface Mount
- Supplier Device Package
- PowerPAK® 8 x 8
- Package / Case
- PowerPAK® 8 x 8
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
Documentation and references
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