Component information
SIJK5100E-T1-GE3
Vishay Siliconix SIJK5100E-T1-GE3: Single FETs, MOSFETs. Package / Case: 8-PowerBSFN. Supplier Device Package: PowerPAK®10 x 12.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Vishay Siliconix
- Series
- TrenchFET®
- Part Status
- Active
- Rds On (Max) @ Id, Vgs
- 1.4mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 200 nC @ 10 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 11480 pF @ 50 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 17W (Ta), 536W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss)
- 100 V
- Current - Continuous Drain (Id) @ 25°C
- 74A (Ta), 417A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 7.5V, 10V
- Mounting Type
- Surface Mount
- Supplier Device Package
- PowerPAK®10 x 12
- Package / Case
- 8-PowerBSFN
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
Documentation and references
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