Component information
SIR401DP-T1-GE3
Vishay Siliconix SIR401DP-T1-GE3: Single FETs, MOSFETs. Package / Case: PowerPAK® SO-8. Supplier Device Package: PowerPAK® SO-8.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Vishay Siliconix
- Series
- TrenchFET®
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 310 nC @ 10 V
- Vgs (Max)
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds
- 9080 pF @ 10 V
- Power Dissipation (Max)
- 5W (Ta), 39W (Tc)
- FET Type
- P-Channel
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 20 V
- Current - Continuous Drain (Id) @ 25°C
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 10V
- Rds On (Max) @ Id, Vgs
- 3.2mOhm @ 15A, 10V
- Mounting Type
- Surface Mount
- Supplier Device Package
- PowerPAK® SO-8
- Package / Case
- PowerPAK® SO-8
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- SIR401
Documentation and references
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