Component information
SIR800DP-T1-GE3
SIR800DP-T1-GE3 component information and product attributes.
Product information
- Manufacturer
- Vishay Siliconix
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 1.5V @ 250µA
- Mfr
- Vishay Siliconix
- Gate Charge (Qg) (Max) @ Vgs
- 133 nC @ 10 V
- Series
- TrenchFET®
- Vgs (Max)
- ±12V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 5125 pF @ 10 V
- Part Status
- Active
- Power Dissipation (Max)
- 5.2W (Ta), 69W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 20 V
- Supplier Device Package
- PowerPAK® SO-8
- Current - Continuous Drain (Id) @ 25°C
- 50A (Tc)
- Package / Case
- PowerPAK® SO-8
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 10V
- Base Product Number
- SIR800
- Rds On (Max) @ Id, Vgs
- 2.3mOhm @ 15A, 10V
Documentation and references
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