SIRS5800DP-T1-GE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Vishay Siliconix

Series

TrenchFET®

Part Status

Active

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

122 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6190 pF @ 40 V

Power Dissipation (Max)

7.4W (Ta), 240W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80 V

Current - Continuous Drain (Id) @ 25°C

46A (Ta), 265A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7.5V, 10V

Rds On (Max) @ Id, Vgs

1.8mOhm @ 20A, 10V

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

SIRS5800