SIS112LDN-T1-GE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Vishay Siliconix

Series

TrenchFET®

Part Status

Active

Rds On (Max) @ Id, Vgs

119mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11.8 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

355 pF @ 50 V

FET Type

N-Channel

Power Dissipation (Max)

3.2W (Ta), 19.8W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

3.5A (Ta), 8.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

Packaging

Tape & Reel (TR); Cut Tape (CT)