Component information
SIS407ADN-T1-GE3
Vishay Siliconix SIS407ADN-T1-GE3: Single FETs, MOSFETs. Package / Case: PowerPAK® 1212-8. Supplier Device Package: PowerPAK® 1212-8.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Vishay Siliconix
- Series
- TrenchFET®
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 168 nC @ 8 V
- Vgs (Max)
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds
- 5875 pF @ 10 V
- Power Dissipation (Max)
- 3.7W (Ta), 39.1W (Tc)
- FET Type
- P-Channel
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 20 V
- Current - Continuous Drain (Id) @ 25°C
- 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs
- 9mOhm @ 15A, 4.5V
- Mounting Type
- Surface Mount
- Supplier Device Package
- PowerPAK® 1212-8
- Package / Case
- PowerPAK® 1212-8
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- SIS407
Documentation and references
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